ZnSe/ZnCdSe quantum confined Stark effect waveguide modulator

P. J. Thompson; S. Y. Wang; G. Horsburgh; T. A. Steele; K. A. Prior; B. C. Cavenett

ZnSe/ZnCdSe quantum confined Stark effect waveguide modulator

P. J. Thompson, S. Y. Wang, G. Horsburgh, T. A. Steele, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe/ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic effect was also observed as a superimposed secondary effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.

Original language	English
Pages (from-to)	902-905
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
Publication status	Published - Feb 1996

Cite this

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title = "ZnSe/ZnCdSe quantum confined Stark effect waveguide modulator",

abstract = "In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe/ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic effect was also observed as a superimposed secondary effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.",

author = "Thompson, {P. J.} and Wang, {S. Y.} and G. Horsburgh and Steele, {T. A.} and Prior, {K. A.} and Cavenett, {B. C.}",

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T1 - ZnSe/ZnCdSe quantum confined Stark effect waveguide modulator

AU - Thompson, P. J.

AU - Wang, S. Y.

AU - Horsburgh, G.

AU - Steele, T. A.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe/ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic effect was also observed as a superimposed secondary effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.

AB - In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe/ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic effect was also observed as a superimposed secondary effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.

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M3 - Article

SN - 0022-0248

VL - 159

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

ZnSe/ZnCdSe quantum confined Stark effect waveguide modulator

Abstract

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