In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe/ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic effect was also observed as a superimposed secondary effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - Feb 1996|