Abstract
We report room temperature operation of a II-VI p-i-n quantum confined Stark effect modulator using a ZnSe-Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p-n junction. A n-type ZnSe layer was used as a novel contact to the p-type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
Original language | English |
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Pages (from-to) | 1715-1717 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 15 |
DOIs | |
Publication status | Published - 1993 |