Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

Saurav Goel; Xichun Luo; Robert L. Reuben

doi:10.1016/j.triboint.2012.06.027

Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

Saurav Goel, Xichun Luo^*, Robert L. Reuben

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

In this paper, a molecular dynamics simulation has been adopted to arrive at a phenomenological understanding of the wear mechanism of diamond tools against single crystal silicon in the single point diamond turning (SPDT) process. The radial distribution function confirms the formation of silicon carbide at the contact interface, which signals the initiation of wear of the diamond tool. A simultaneous mechanism of sp(3)-sp(2) disorder of the diamond tool was also found to proceed in tandem. This mechanism is corroborated by a recent experimental study, where silicon carbide and. carbon like particles were observed after machining of single crystal silicon with a diamond tool through X-ray photoelectron spectroscope (XPS) technology. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	272-281
Number of pages	10
Journal	Tribology International
Volume	57
DOIs	https://doi.org/10.1016/j.triboint.2012.06.027
Publication status	Published - Jan 2013

Keywords

ATOMIC-SCALE
DUCTILE
MONOCRYSTALLINE SILICON
CRYSTALLOGRAPHIC ORIENTATION
MOLECULAR-DYNAMICS SIMULATION
QUANTITATIVE ASSESSMENT
Single point diamond turning
RAMAN-SPECTROSCOPY
GROOVE WEAR
CUTTING TOOLS
MD simulation
Tool wear
PHASE-TRANSFORMATION

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10.1016/j.triboint.2012.06.027

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@article{3373c876c72d4420adfc9cc9dda64868,

title = "Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process",

abstract = "In this paper, a molecular dynamics simulation has been adopted to arrive at a phenomenological understanding of the wear mechanism of diamond tools against single crystal silicon in the single point diamond turning (SPDT) process. The radial distribution function confirms the formation of silicon carbide at the contact interface, which signals the initiation of wear of the diamond tool. A simultaneous mechanism of sp(3)-sp(2) disorder of the diamond tool was also found to proceed in tandem. This mechanism is corroborated by a recent experimental study, where silicon carbide and. carbon like particles were observed after machining of single crystal silicon with a diamond tool through X-ray photoelectron spectroscope (XPS) technology. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.",

keywords = "ATOMIC-SCALE, DUCTILE, MONOCRYSTALLINE SILICON, CRYSTALLOGRAPHIC ORIENTATION, MOLECULAR-DYNAMICS SIMULATION, QUANTITATIVE ASSESSMENT, Single point diamond turning, RAMAN-SPECTROSCOPY, GROOVE WEAR, CUTTING TOOLS, MD simulation, Tool wear, PHASE-TRANSFORMATION",

author = "Saurav Goel and Xichun Luo and Reuben, {Robert L.}",

year = "2013",

month = jan,

doi = "10.1016/j.triboint.2012.06.027",

language = "English",

volume = "57",

pages = "272--281",

journal = "Tribology International",

issn = "0301-679X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

AU - Goel, Saurav

AU - Luo, Xichun

AU - Reuben, Robert L.

PY - 2013/1

Y1 - 2013/1

N2 - In this paper, a molecular dynamics simulation has been adopted to arrive at a phenomenological understanding of the wear mechanism of diamond tools against single crystal silicon in the single point diamond turning (SPDT) process. The radial distribution function confirms the formation of silicon carbide at the contact interface, which signals the initiation of wear of the diamond tool. A simultaneous mechanism of sp(3)-sp(2) disorder of the diamond tool was also found to proceed in tandem. This mechanism is corroborated by a recent experimental study, where silicon carbide and. carbon like particles were observed after machining of single crystal silicon with a diamond tool through X-ray photoelectron spectroscope (XPS) technology. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

AB - In this paper, a molecular dynamics simulation has been adopted to arrive at a phenomenological understanding of the wear mechanism of diamond tools against single crystal silicon in the single point diamond turning (SPDT) process. The radial distribution function confirms the formation of silicon carbide at the contact interface, which signals the initiation of wear of the diamond tool. A simultaneous mechanism of sp(3)-sp(2) disorder of the diamond tool was also found to proceed in tandem. This mechanism is corroborated by a recent experimental study, where silicon carbide and. carbon like particles were observed after machining of single crystal silicon with a diamond tool through X-ray photoelectron spectroscope (XPS) technology. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

KW - ATOMIC-SCALE

KW - DUCTILE

KW - MONOCRYSTALLINE SILICON

KW - CRYSTALLOGRAPHIC ORIENTATION

KW - MOLECULAR-DYNAMICS SIMULATION

KW - QUANTITATIVE ASSESSMENT

KW - Single point diamond turning

KW - RAMAN-SPECTROSCOPY

KW - GROOVE WEAR

KW - CUTTING TOOLS

KW - MD simulation

KW - Tool wear

KW - PHASE-TRANSFORMATION

U2 - 10.1016/j.triboint.2012.06.027

DO - 10.1016/j.triboint.2012.06.027

M3 - Article

SN - 0301-679X

VL - 57

SP - 272

EP - 281

JO - Tribology International

JF - Tribology International

ER -

Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

Abstract

Keywords

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