Versatile mode-locked quantum-dot laser diodes

Maria Ana Cataluna, Edik U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edgeemitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Laser Dynamics IV
EditorsKrassimir Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik
Volume7720
DOIs
Publication statusPublished - 2010
EventSemiconductor Lasers and Laser Dynamics IV - Brussels, Belgium
Duration: 12 Apr 201016 Apr 2010

Conference

ConferenceSemiconductor Lasers and Laser Dynamics IV
CountryBelgium
CityBrussels
Period12/04/1016/04/10

Keywords

  • Excited state
  • Ground state
  • Mode locking
  • Quantum dots
  • Ultrafast lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Cataluna, M. A., & Rafailov, E. U. (2010). Versatile mode-locked quantum-dot laser diodes. In K. Panajotov, M. Sciamanna, A. A. Valle, & R. Michalzik (Eds.), Semiconductor Lasers and Laser Dynamics IV (Vol. 7720). [77200W] https://doi.org/10.1117/12.854639