Versatile mode-locked quantum-dot laser diodes

Maria Ana Cataluna; Edik U. Rafailov

doi:10.1117/12.854639

Versatile mode-locked quantum-dot laser diodes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edgeemitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

Original language	English
Title of host publication	Semiconductor Lasers and Laser Dynamics IV
Editors	Krassimir Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik
Volume	7720
DOIs	https://doi.org/10.1117/12.854639
Publication status	Published - 2010
Event	Semiconductor Lasers and Laser Dynamics IV - Brussels, Belgium Duration: 12 Apr 2010 → 16 Apr 2010

Conference

Conference	Semiconductor Lasers and Laser Dynamics IV
Country/Territory	Belgium
City	Brussels
Period	12/04/10 → 16/04/10

Keywords

Excited state
Ground state
Mode locking
Quantum dots
Ultrafast lasers

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.854639

Cite this

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title = "Versatile mode-locked quantum-dot laser diodes",

abstract = "Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edgeemitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.",

keywords = "Excited state, Ground state, Mode locking, Quantum dots, Ultrafast lasers",

author = "Cataluna, {Maria Ana} and Rafailov, {Edik U.}",

year = "2010",

doi = "10.1117/12.854639",

language = "English",

isbn = "9780819481931",

volume = "7720",

editor = "Panajotov, {Krassimir } and Sciamanna, {Marc } and Valle, {Angel A. } and Rainer Michalzik",

booktitle = "Semiconductor Lasers and Laser Dynamics IV",

note = "Semiconductor Lasers and Laser Dynamics IV ; Conference date: 12-04-2010 Through 16-04-2010",

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TY - GEN

T1 - Versatile mode-locked quantum-dot laser diodes

AU - Cataluna, Maria Ana

AU - Rafailov, Edik U.

PY - 2010

Y1 - 2010

N2 - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edgeemitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

AB - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edgeemitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.

KW - Excited state

KW - Ground state

KW - Mode locking

KW - Quantum dots

KW - Ultrafast lasers

UR - http://www.scopus.com/inward/record.url?scp=77957875262&partnerID=8YFLogxK

U2 - 10.1117/12.854639

DO - 10.1117/12.854639

M3 - Conference contribution

AN - SCOPUS:77957875262

SN - 9780819481931

VL - 7720

BT - Semiconductor Lasers and Laser Dynamics IV

A2 - Panajotov, Krassimir

A2 - Sciamanna, Marc

A2 - Valle, Angel A.

A2 - Michalzik, Rainer

T2 - Semiconductor Lasers and Laser Dynamics IV

Y2 - 12 April 2010 through 16 April 2010

ER -

Versatile mode-locked quantum-dot laser diodes

Abstract

Conference

Keywords

ASJC Scopus subject areas

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