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Valence band engineering of GaAsBi for low noise avalanche photodiodes
Yuchen Liu
,
Xin Yi
, Nicholas J. Bailey
, Zhize Zhou
, Thomas B. O. Rockett
, Leh W. Lim
, Chee H. Tan
, Robert D Richards
, John P. R. David
Institute of Photonics and Quantum Sciences
School of Engineering & Physical Sciences
Research output
:
Contribution to journal
›
Article
›
peer-review
36
Citations (Scopus)
97
Downloads (Pure)
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INIS
engineering
100%
noise
100%
valence
100%
photodiodes
100%
semiconductor materials
50%
ionization
50%
gallium arsenides
50%
values
25%
stochastic processes
25%
sensitivity
25%
energy
25%
wavelengths
25%
signals
25%
spin
25%
holes
25%
electrons
25%
signal-to-noise ratio
25%
orbits
25%
dilute alloys
25%
Chemistry
Valence Band
100%
Gaas
100%
Spin-Orbit Splitting
50%
Signal-to-Noise Ratio
50%
Impact Ionization
50%
Stochastic Process
50%
Alloying
50%
Optical Communication
50%
Engineering
Engineering
100%
Avalanche Photodiode
100%
Valence Band
100%
Gallium Arsenide
50%
Noise Sensitivity
25%
Signal-to-Noise Ratio
25%
Optical Signal
25%
Alloying
25%
Impact Ionization
25%