Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Nick S Bennett; Nick E. B. Cowern; S. Paul; Wilfried Lerch; Hamid Kheyrandish; A. J. Smith; R. M. Gwilliam; B. J. Seal

doi:10.1109/ESSDERC.2008.4681755

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Nick S Bennett, Nick E. B. Cowern, S. Paul, Wilfried Lerch, Hamid Kheyrandish, A. J. Smith, R. M. Gwilliam, B. J. Seal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

Original language	English
Title of host publication	38th European Solid-State Device Research Conference, 2008
Editors	Stephen Hall, Anthony Walton
Publisher	IEEE
Pages	290-293
Number of pages	4
ISBN (Electronic)	978-1-4244-2364-4
ISBN (Print)	978-1-4244-2363-7
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681755
Publication status	Published - 2008
Event	38th European Solid-State Device Research Conference - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008

Conference

Conference	38th European Solid-State Device Research Conference
Abbreviated title	ESSDERC 2008
Country/Territory	United Kingdom
City	Edinburgh
Period	15/09/08 → 19/09/08

Keywords

SI

Access to Document

10.1109/ESSDERC.2008.4681755

Cite this

@inproceedings{6fa4549225eb46e0830ad847072e67fa,

title = "Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon",

abstract = "Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.",

keywords = "SI",

author = "Bennett, \{Nick S\} and Cowern, \{Nick E. B.\} and S. Paul and Wilfried Lerch and Hamid Kheyrandish and Smith, \{A. J.\} and Gwilliam, \{R. M.\} and Seal, \{B. J.\}",

note = "INSPEC Accession Number: 10394862; 38th European Solid-State Device Research Conference, ESSDERC 2008 ; Conference date: 15-09-2008 Through 19-09-2008",

year = "2008",

doi = "10.1109/ESSDERC.2008.4681755",

language = "English",

isbn = "978-1-4244-2363-7",

pages = "290--293",

editor = "Stephen Hall and Anthony Walton",

booktitle = "38th European Solid-State Device Research Conference, 2008",

publisher = "IEEE",

address = "United States",

}

Bennett, NS, Cowern, NEB, Paul, S, Lerch, W, Kheyrandish, H, Smith, AJ, Gwilliam, RM & Seal, BJ 2008, Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon. in S Hall & A Walton (eds), 38th European Solid-State Device Research Conference, 2008. IEEE, pp. 290-293, 38th European Solid-State Device Research Conference, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681755

TY - GEN

T1 - Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

AU - Bennett, Nick S

AU - Cowern, Nick E. B.

AU - Paul, S.

AU - Lerch, Wilfried

AU - Kheyrandish, Hamid

AU - Smith, A. J.

AU - Gwilliam, R. M.

AU - Seal, B. J.

N1 - INSPEC Accession Number: 10394862

PY - 2008

Y1 - 2008

N2 - Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

AB - Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

KW - SI

U2 - 10.1109/ESSDERC.2008.4681755

DO - 10.1109/ESSDERC.2008.4681755

M3 - Conference contribution

SN - 978-1-4244-2363-7

SP - 290

EP - 293

BT - 38th European Solid-State Device Research Conference, 2008

A2 - Hall, Stephen

A2 - Walton, Anthony

PB - IEEE

T2 - 38th European Solid-State Device Research Conference

Y2 - 15 September 2008 through 19 September 2008

ER -

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

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