Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Nick S Bennett, Nick E. B. Cowern, S. Paul, Wilfried Lerch, Hamid Kheyrandish, A. J. Smith, R. M. Gwilliam, B. J. Seal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 10(21) cm(-3) can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

Original languageEnglish
Title of host publication38th European Solid-State Device Research Conference, 2008
EditorsStephen Hall, Anthony Walton
Number of pages4
ISBN (Electronic)978-1-4244-2364-4
ISBN (Print)978-1-4244-2363-7
Publication statusPublished - 2008
Event38th European Solid-State Device Research Conference - Edinburgh, United Kingdom
Duration: 15 Sept 200819 Sept 2008


Conference38th European Solid-State Device Research Conference
Abbreviated titleESSDERC 2008
Country/TerritoryUnited Kingdom


  • SI


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