UV laser assisted growth of molecular beam epitaxial ZnSe

J. Simpson; S. J A Adams; S. Y. Wang; J. M. Wallace; K. A. Prior; B. C. Cavenett

UV laser assisted growth of molecular beam epitaxial ZnSe

J. Simpson, S. J A Adams, S. Y. Wang, J. M. Wallace, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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14 Citations (Scopus)

Abstract

Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine. © 1992.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Journal of Crystal Growth
Volume	117
Issue number	1-4
Publication status	Published - 2 Feb 1992

Cite this

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title = "UV laser assisted growth of molecular beam epitaxial ZnSe",

abstract = "Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine. {\textcopyright} 1992.",

author = "J. Simpson and Adams, {S. J A} and Wang, {S. Y.} and Wallace, {J. M.} and Prior, {K. A.} and Cavenett, {B. C.}",

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journal = "Journal of Crystal Growth",

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AU - Simpson, J.

AU - Adams, S. J A

AU - Wang, S. Y.

AU - Wallace, J. M.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine. © 1992.

AB - Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine. © 1992.

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M3 - Article

SN - 0022-0248

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SP - 134

EP - 138

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

UV laser assisted growth of molecular beam epitaxial ZnSe

Abstract

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