UV laser assisted growth of molecular beam epitaxial ZnSe

J. Simpson, S. J A Adams, S. Y. Wang, J. M. Wallace, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine. © 1992.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2 Feb 1992


Dive into the research topics of 'UV laser assisted growth of molecular beam epitaxial ZnSe'. Together they form a unique fingerprint.

Cite this