Abstract
Reactive ion etching of (100) CVD diamond films in O2 has been performed using a 13.56 MHz capacitively coupled reactor at pressures of 20 mTorr-100 mTorr and r.f. powers of 100 W-300 W. The formation of columnar structures was observed at the grain boundaries whereas the (100) facets were etched to yield a smooth surface under optimum conditions. For comparison, the RIE of single, isolated cubo-octahedral crystallites produced smooth (100) facets and roughened (111) surfaces reminiscent of the micro-columnar structures evident in the films. © 2008 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 1164-1168 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 17 |
Issue number | 7-10 |
DOIs | |
Publication status | Published - Jul 2008 |
Keywords
- Chemical vapor deposition
- Diamond film
- Microstructure
- Plasma CVD
- Reactive ion etching (RIE)