Unusual enhancement in electrical conductivity of tin oxide thin films with zinc doping

Yinzhu Jiang; Wenping Sun; Bin Xu; Mi Yan; Naoufal Bahlawane

doi:10.1039/c0cp00816h

Unusual enhancement in electrical conductivity of tin oxide thin films with zinc doping

Yinzhu Jiang, Wenping Sun, Bin Xu, Mi Yan, Naoufal Bahlawane

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Electrical conductivity of SnO₂-based oxides is of great importance for their application as transparent conducting oxides (TCO) and gas sensors. In this paper, for the first time, an unusual enhancement in electrical conductivity was observed for SnO₂ films upon zinc doping. Films with Zn/(Zn + Sn) reaching 0.48 were grown by pulsed spray-evaporation chemical vapor deposition. X-Ray diffraction (XRD) shows that pure and zinc-doped SnO₂ films grow in the tetragonal rutile-type structure. Within the low doping concentration range, Zn leads to a significant decrease of the crystallite size and electrical resistivity. Increasing Zn doping concentration above Zn/(Zn + Sn) = 0.12 leads to an XRD-amorphous film with electrical resistivity below 0.015 cm at room temperature. Optical measurements show transparencies above 80% in the visible spectral range for all films, and doping was shown to be efficient for the band gap tuning. © the Owner Societies. 2011.

Original language	English
Pages (from-to)	5760-5763
Number of pages	4
Journal	Physical Chemistry Chemical Physics
Volume	13
Issue number	13
DOIs	https://doi.org/10.1039/c0cp00816h
Publication status	Published - 7 Apr 2011

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abstract = "Electrical conductivity of SnO2-based oxides is of great importance for their application as transparent conducting oxides (TCO) and gas sensors. In this paper, for the first time, an unusual enhancement in electrical conductivity was observed for SnO2 films upon zinc doping. Films with Zn/(Zn + Sn) reaching 0.48 were grown by pulsed spray-evaporation chemical vapor deposition. X-Ray diffraction (XRD) shows that pure and zinc-doped SnO2 films grow in the tetragonal rutile-type structure. Within the low doping concentration range, Zn leads to a significant decrease of the crystallite size and electrical resistivity. Increasing Zn doping concentration above Zn/(Zn + Sn) = 0.12 leads to an XRD-amorphous film with electrical resistivity below 0.015 cm at room temperature. Optical measurements show transparencies above 80% in the visible spectral range for all films, and doping was shown to be efficient for the band gap tuning. {\textcopyright} the Owner Societies. 2011.",

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AU - Jiang, Yinzhu

AU - Sun, Wenping

AU - Xu, Bin

AU - Yan, Mi

AU - Bahlawane, Naoufal

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N2 - Electrical conductivity of SnO2-based oxides is of great importance for their application as transparent conducting oxides (TCO) and gas sensors. In this paper, for the first time, an unusual enhancement in electrical conductivity was observed for SnO2 films upon zinc doping. Films with Zn/(Zn + Sn) reaching 0.48 were grown by pulsed spray-evaporation chemical vapor deposition. X-Ray diffraction (XRD) shows that pure and zinc-doped SnO2 films grow in the tetragonal rutile-type structure. Within the low doping concentration range, Zn leads to a significant decrease of the crystallite size and electrical resistivity. Increasing Zn doping concentration above Zn/(Zn + Sn) = 0.12 leads to an XRD-amorphous film with electrical resistivity below 0.015 cm at room temperature. Optical measurements show transparencies above 80% in the visible spectral range for all films, and doping was shown to be efficient for the band gap tuning. © the Owner Societies. 2011.

AB - Electrical conductivity of SnO2-based oxides is of great importance for their application as transparent conducting oxides (TCO) and gas sensors. In this paper, for the first time, an unusual enhancement in electrical conductivity was observed for SnO2 films upon zinc doping. Films with Zn/(Zn + Sn) reaching 0.48 were grown by pulsed spray-evaporation chemical vapor deposition. X-Ray diffraction (XRD) shows that pure and zinc-doped SnO2 films grow in the tetragonal rutile-type structure. Within the low doping concentration range, Zn leads to a significant decrease of the crystallite size and electrical resistivity. Increasing Zn doping concentration above Zn/(Zn + Sn) = 0.12 leads to an XRD-amorphous film with electrical resistivity below 0.015 cm at room temperature. Optical measurements show transparencies above 80% in the visible spectral range for all films, and doping was shown to be efficient for the band gap tuning. © the Owner Societies. 2011.

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Unusual enhancement in electrical conductivity of tin oxide thin films with zinc doping

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