Ultrahigh-Density Nanowire Lattices and Circuits

Nicholas A. Melosh, Akram Boukai, Frederic Diana, Brian Gerardot, Antonio Badolato, Pierre M. Petroff, James R. Heath*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

832 Citations (Scopus)

Abstract

We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 106), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 1011 per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated.

Original languageEnglish
Pages (from-to)112-115
Number of pages4
JournalScience
Volume300
Issue number5616
DOIs
Publication statusPublished - 4 Apr 2003

ASJC Scopus subject areas

  • General

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