ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR

H  WANG; P  LIKAMWA; M  GHISONI; G  PARRY; P N  STAVRINOU; C  ROBERTS; A  MILLER

ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR

H WANG, P LIKAMWA, M GHISONI, G PARRY, P N STAVRINOU, C ROBERTS, A MILLER

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.

Original language	English
Pages (from-to)	173-175
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	2
Publication status	Published - Feb 1995

Cite this

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title = "ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR",

abstract = "We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.",

author = "H WANG and P LIKAMWA and M GHISONI and G PARRY and STAVRINOU, {P N} and C ROBERTS and A MILLER",

year = "1995",

month = feb,

language = "English",

volume = "7",

pages = "173--175",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

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T1 - ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR

AU - WANG, H

AU - LIKAMWA, P

AU - GHISONI, M

AU - PARRY, G

AU - STAVRINOU, P N

AU - ROBERTS, C

AU - MILLER, A

PY - 1995/2

Y1 - 1995/2

N2 - We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.

AB - We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.

M3 - Article

SN - 1041-1135

VL - 7

SP - 173

EP - 175

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR

Abstract

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