Ultrafast optical tuning of epsilon-near-zero thin films

Clayton DeVault, Nathaniel Kinsey, Jongbum Kim, Aveek Dutta, Marcello Ferrera, Vladimir M. Shalaev, Alexandra Boltasseva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Large and ultra-fast transient reflectivity and transmissivity are recorded via pump (λ=325nm) and probe (λ=1300nm) experiments on aluminum-doped zinc oxide thin films engineered to possess ultra-fast electron-hole recombination and epsilon-near-zero behavior in the NIR.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics (CLEO)
PublisherIEEE
ISBN (Electronic)9781943580118
Publication statusPublished - 19 Dec 2016
Event2016 Conference on Lasers and Electro-Optics - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics
Abbreviated titleCLEO 2016
CountryUnited States
CitySan Jose
Period5/06/1610/06/16

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    DeVault, C., Kinsey, N., Kim, J., Dutta, A., Ferrera, M., Shalaev, V. M., & Boltasseva, A. (2016). Ultrafast optical tuning of epsilon-near-zero thin films. In 2016 Conference on Lasers and Electro-Optics (CLEO) [7787933] IEEE.