Abstract
By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.
Original language | English |
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Title of host publication | CLEO: Applications and Technology 2013 |
Publication status | Published - 2013 |
Event | CLEO: Applications and Technology 2013 - San Jose, CA, United States Duration: 9 Jun 2013 → 14 Jun 2013 |
Conference
Conference | CLEO: Applications and Technology 2013 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 9/06/13 → 14/06/13 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics