Two-photon laser-assisted device alteration in silicon integrated circuits using a 1.28-μm femtosecond raman- soliton fiber laser

K. A. Serrels, D. Bodoh, D. T. Reid, C. Farrell, N. Leslie, T. R. Lundquist, P. Vedagarbha, K. Erington

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.

Original languageEnglish
Title of host publicationCLEO: Applications and Technology 2013
Publication statusPublished - 2013
EventCLEO: Applications and Technology 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Conference

ConferenceCLEO: Applications and Technology 2013
CountryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Serrels, K. A., Bodoh, D., Reid, D. T., Farrell, C., Leslie, N., Lundquist, T. R., Vedagarbha, P., & Erington, K. (2013). Two-photon laser-assisted device alteration in silicon integrated circuits using a 1.28-μm femtosecond raman- soliton fiber laser. In CLEO: Applications and Technology 2013