Two-Photon Absorption in Zinc-Blende Semiconductors

C. R. Pidgeon; B. S. Wherrett; A. M. Johnston; J. Dempsey; Alan Miller

doi:10.1103/PhysRevLett.42.1785

Two-Photon Absorption in Zinc-Blende Semiconductors

C. R. Pidgeon
, B. S. Wherrett
, A. M. Johnston
, J. Dempsey
, Alan Miller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

123 Citations (Scopus)

277 Downloads (Pure)

Abstract

It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. © 1979 The American Physical Society.

Original language	English
Pages (from-to)	1785-1788
Number of pages	4
Journal	Physical Review Letters
Volume	42
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.42.1785
Publication status	Published - 1979

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title = "Two-Photon Absorption in Zinc-Blende Semiconductors",

abstract = "It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. {\textcopyright} 1979 The American Physical Society.",

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AU - Pidgeon, C. R.

AU - Wherrett, B. S.

AU - Johnston, A. M.

AU - Dempsey, J.

AU - Miller, Alan

PY - 1979

Y1 - 1979

N2 - It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. © 1979 The American Physical Society.

AB - It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. © 1979 The American Physical Society.

UR - https://www.scopus.com/pages/publications/0001582018

U2 - 10.1103/PhysRevLett.42.1785

DO - 10.1103/PhysRevLett.42.1785

M3 - Article

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VL - 42

SP - 1785

EP - 1788

JO - Physical Review Letters

JF - Physical Review Letters

IS - 26

ER -

Two-Photon Absorption in Zinc-Blende Semiconductors

Abstract

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