Two-Photon Absorption in Zinc-Blende Semiconductors

C. R. Pidgeon, B. S. Wherrett, A. M. Johnston, J. Dempsey, Alan Miller

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Abstract

It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. © 1979 The American Physical Society.

Original languageEnglish
Pages (from-to)1785-1788
Number of pages4
JournalPhysical Review Letters
Volume42
Issue number26
DOIs
Publication statusPublished - 1979

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