Two CMOS BGR using CM and DTMOST techniques

Faisal Mohd-Yasin; Ying Khai Teh; Florence Chiao Mei Choong; Mamun Bin Ibne Reaz

Two CMOS BGR using CM and DTMOST techniques

Faisal Mohd-Yasin, Ying Khai Teh, Florence Chiao Mei Choong, Mamun Bin Ibne Reaz

School of Engineering & Physical Sciences

Research output: Book/Report › Commissioned report

Abstract

Two CMOS BGR using current mode (0.044mm2) and Dynamic Threshold MOST (0.017mm2) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating VDD 1.28V at 25oC; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support VDD range up to 4V required by passive UHF RFID.

Original language	English
Publisher	Abdus Salam International Centre for Theoretical Physics
Number of pages	9
Volume	042
Publication status	Published - Jun 2009

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title = "Two CMOS BGR using CM and DTMOST techniques",

abstract = "Two CMOS BGR using current mode (0.044mm2) and Dynamic Threshold MOST (0.017mm2) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating VDD 1.28V at 25oC; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support VDD range up to 4V required by passive UHF RFID.",

author = "Faisal Mohd-Yasin and Teh, \{Ying Khai\} and Choong, \{Florence Chiao Mei\} and Reaz, \{Mamun Bin Ibne\}",

year = "2009",

month = jun,

language = "English",

volume = "042",

publisher = "Abdus Salam International Centre for Theoretical Physics",

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TY - BOOK

T1 - Two CMOS BGR using CM and DTMOST techniques

AU - Mohd-Yasin, Faisal

AU - Teh, Ying Khai

AU - Choong, Florence Chiao Mei

AU - Reaz, Mamun Bin Ibne

PY - 2009/6

Y1 - 2009/6

N2 - Two CMOS BGR using current mode (0.044mm2) and Dynamic Threshold MOST (0.017mm2) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating VDD 1.28V at 25oC; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support VDD range up to 4V required by passive UHF RFID.

AB - Two CMOS BGR using current mode (0.044mm2) and Dynamic Threshold MOST (0.017mm2) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating VDD 1.28V at 25oC; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support VDD range up to 4V required by passive UHF RFID.

M3 - Commissioned report

VL - 042

BT - Two CMOS BGR using CM and DTMOST techniques

PB - Abdus Salam International Centre for Theoretical Physics

ER -

Two CMOS BGR using CM and DTMOST techniques

Abstract

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