Tuning the cross-gap transition energy of a quantum dot by uniaxial stress

S. Seidl, A. Högele, M. Kroner, K. Karrai, A. Badolato, P. M. Petroff, R. J. Warburton

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12 Citations (Scopus)

Abstract

We show that a piezoelectric actuator can be used to apply uniaxial stress to a layer of self-assembled quantum dots. The applied stress leads to a change of the quantum dot's ground state exciton energy by up to a few hundred µ eV. This approach allows the possibility of an in situ and continuous tuning of the stress at temperatures down to 4 K and offers an alternative to tuning by temperature and Stark effect. We measure the relative change in the charging energy to the n-doped back contact by capacitance and the change in the exciton energy by photoluminescence. By tuning the uniaxial stress we are able to perform reflection spectroscopy on a single dot. © 2006 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)14-16
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - May 2006

Keywords

  • Energy tuning
  • Quantum dot
  • Spectroscopy
  • Uniaxial stress

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    Seidl, S., Högele, A., Kroner, M., Karrai, K., Badolato, A., Petroff, P. M., & Warburton, R. J. (2006). Tuning the cross-gap transition energy of a quantum dot by uniaxial stress. Physica E: Low-Dimensional Systems and Nanostructures, 32(1-2 SPEC. ISS.), 14-16. https://doi.org/10.1016/j.physe.2005.12.069