Far-infrared radiation tunable over the range 85-105 cm-1 and at power levels of up to 10 µW has been generated by difference frequency mixing in InSb. The infra-red radiations which are mixed are a 10.6 µm TEA-CO2 laser line and the tunable Stokes radiation produced from it by spin-flip Raman-laser action, again in an InSb sample. It is argued that careful choice of the free-carrier concentrations in the crystals used for (a) the Stokes generation and (b) the mixing, or the application of an electric field across the mixing sample, should considerably improve the far-infrared power levels. © 1974.
|Number of pages||4|
|Publication status||Published - Sep 1974|