True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

D. J. Goodwill; A. C. Walker; A. H. Kean; C. R. Stanley

True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

D. J. Goodwill, A. C. Walker, A. H. Kean, C. R. Stanley

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 µW.

Original language	English
Pages (from-to)	1599-1601
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	17
Publication status	Published - 1 Jan 1992

Cite this

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title = "True-CW operation of GaAs bistable etalon with electronic optical nonlinearity",

abstract = "An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 µW.",

author = "Goodwill, {D. J.} and Walker, {A. C.} and Kean, {A. H.} and Stanley, {C. R.}",

year = "1992",

month = jan,

day = "1",

language = "English",

volume = "28",

pages = "1599--1601",

journal = "Electronics Letters",

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TY - JOUR

T1 - True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

AU - Goodwill, D. J.

AU - Walker, A. C.

AU - Kean, A. H.

AU - Stanley, C. R.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 µW.

AB - An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 µW.

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M3 - Article

SN - 1350-911X

VL - 28

SP - 1599

EP - 1601

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

Abstract

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