Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown, Y. Y. Loginov, J. T. Mullins, K. Durose, A. W. Brinkman, C. J. Humphreys

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

Original languageEnglish
Pages (from-to)538-544
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2 Apr 1994


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