Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.
|Number of pages||7|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2 Apr 1994|