Abstract
Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.
Original language | English |
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Pages (from-to) | 538-544 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 138 |
Issue number | 1-4 |
Publication status | Published - 2 Apr 1994 |
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Transmission electron microscopy investigations of II-VI/GaAs heterostructures. / Brown, P. D.; Loginov, Y. Y.; Mullins, J. T.; Durose, K.; Brinkman, A. W.; Humphreys, C. J.
In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 538-544.Research output: Contribution to journal › Article
TY - JOUR
T1 - Transmission electron microscopy investigations of II-VI/GaAs heterostructures
AU - Brown, P. D.
AU - Loginov, Y. Y.
AU - Mullins, J. T.
AU - Durose, K.
AU - Brinkman, A. W.
AU - Humphreys, C. J.
PY - 1994/4/2
Y1 - 1994/4/2
N2 - Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.
AB - Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.
UR - http://www.scopus.com/inward/record.url?scp=0028760733&partnerID=8YFLogxK
M3 - Article
VL - 138
SP - 538
EP - 544
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -