Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown, Y. Y. Loginov, J. T. Mullins, K. Durose, A. W. Brinkman, C. J. Humphreys

Research output: Contribution to journalArticle

Abstract

Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

Original languageEnglish
Pages (from-to)538-544
Number of pages7
JournalJournal of Crystal Growth
Volume138
Issue number1-4
Publication statusPublished - 2 Apr 1994

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    Brown, P. D., Loginov, Y. Y., Mullins, J. T., Durose, K., Brinkman, A. W., & Humphreys, C. J. (1994). Transmission electron microscopy investigations of II-VI/GaAs heterostructures. Journal of Crystal Growth, 138(1-4), 538-544.