Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown; Y. Y. Loginov; J. T. Mullins; K. Durose; A. W. Brinkman; C. J. Humphreys

Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown, Y. Y. Loginov, J. T. Mullins, K. Durose, A. W. Brinkman, C. J. Humphreys

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article

Abstract

Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

Original language	English
Pages (from-to)	538-544
Number of pages	7
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
Publication status	Published - 2 Apr 1994

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title = "Transmission electron microscopy investigations of II-VI/GaAs heterostructures",

abstract = "Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. {\textcopyright} 1994.",

author = "Brown, {P. D.} and Loginov, {Y. Y.} and Mullins, {J. T.} and K. Durose and Brinkman, {A. W.} and Humphreys, {C. J.}",

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month = apr,

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language = "English",

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AU - Brown, P. D.

AU - Loginov, Y. Y.

AU - Mullins, J. T.

AU - Durose, K.

AU - Brinkman, A. W.

AU - Humphreys, C. J.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

AB - Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

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VL - 138

SP - 538

EP - 544

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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