Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown; Y. Y. Loginov; J. T. Mullins; K. Durose; A. W. Brinkman; C. J. Humphreys

Transmission electron microscopy investigations of II-VI/GaAs heterostructures

P. D. Brown, Y. Y. Loginov, J. T. Mullins, K. Durose, A. W. Brinkman, C. J. Humphreys

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article

Abstract

Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. © 1994.

Original language	English
Pages (from-to)	538-544
Number of pages	7
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
Publication status	Published - 2 Apr 1994

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Brown, P. D., Loginov, Y. Y., Mullins, J. T., Durose, K., Brinkman, A. W., & Humphreys, C. J. (1994). Transmission electron microscopy investigations of II-VI/GaAs heterostructures. Journal of Crystal Growth, 138(1-4), 538-544.

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abstract = "Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described. {\textcopyright} 1994.",

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AU - Humphreys, C. J.

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