TY - JOUR
T1 - Transient Optical Properties of CsPbX3/Poly(maleic anhydride-alt-1-octadecene) Perovskite Quantum Dots for White Light-Emitting Diodes
AU - Xu, Jian
AU - Zhu, Liang
AU - Chen, Jia
AU - Riaz, Saba
AU - Sun, Liwei
AU - Wang, Ying
AU - Wang, Wei
AU - Dai, Jun
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (11874185).
Publisher Copyright:
© 2020 Wiley-VCH GmbH
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/1/12
Y1 - 2021/1/12
N2 - Poly(maleic anhydride-alt-1-octadecene) (PMAO)-coated green CsPbBr3 and red CsPbBr0.6I2.4 quantum dots (QDs), as the phosphor materials for white light-emitting diodes (WLEDs), are reported. The anhydride groups of PMAO can be bound to the surface ligands of perovskite QDs and act as a protective layer. The results show that CsPbX3/PMAO (X = Cl, Br, I) presents good crystallinity and excellent luminescence properties. Time-resolved photoluminescence (TRPL) shows that the PL lifetime of CsPbX3/PMAO is prolonged, and the transient absorption (TA) results show that intraband hot-exciton relaxation and exciton recombination can be slowed down when the CsPbX3 QDs are coated with PMAO. However, the PL quantum yields (PLQYs) increase for both the green-emitting QDs and the red-emitting QDs after PMAO coating. WLED devices are fabricated by integrating the green CsPbBr3/PMAO QDs and red CsPbBr0.6I2.4/PMAO QDs on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage (CIE) color coordinates of (0.314, 0.291). The results indicate that CsPbX3/PMAO QDs can be an ideal downconversion fluorescent material for WLED devices.
AB - Poly(maleic anhydride-alt-1-octadecene) (PMAO)-coated green CsPbBr3 and red CsPbBr0.6I2.4 quantum dots (QDs), as the phosphor materials for white light-emitting diodes (WLEDs), are reported. The anhydride groups of PMAO can be bound to the surface ligands of perovskite QDs and act as a protective layer. The results show that CsPbX3/PMAO (X = Cl, Br, I) presents good crystallinity and excellent luminescence properties. Time-resolved photoluminescence (TRPL) shows that the PL lifetime of CsPbX3/PMAO is prolonged, and the transient absorption (TA) results show that intraband hot-exciton relaxation and exciton recombination can be slowed down when the CsPbX3 QDs are coated with PMAO. However, the PL quantum yields (PLQYs) increase for both the green-emitting QDs and the red-emitting QDs after PMAO coating. WLED devices are fabricated by integrating the green CsPbBr3/PMAO QDs and red CsPbBr0.6I2.4/PMAO QDs on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage (CIE) color coordinates of (0.314, 0.291). The results indicate that CsPbX3/PMAO QDs can be an ideal downconversion fluorescent material for WLED devices.
KW - perovskites
KW - quantum dots
KW - transient absorption
KW - white light-emitting diodes
UR - http://www.scopus.com/inward/record.url?scp=85097423612&partnerID=8YFLogxK
U2 - 10.1002/pssr.202000498
DO - 10.1002/pssr.202000498
M3 - Article
AN - SCOPUS:85097423612
SN - 1862-6254
VL - 15
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 1
M1 - 2000498
ER -