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Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs
E. M. Bazizi, P. F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, Nick E. B. Cowern, Nick Bennett, C. Ahn, J. C. Yoon
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2
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(Scopus)