Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

E. M. Bazizi, P. F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, Nick E. B. Cowern, Nick Bennett, C. Ahn, J. C. Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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Physics & Astronomy

Chemical Compounds

Engineering & Materials Science