Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

E. M. Bazizi, P. F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, Nick E. B. Cowern, Nick Bennett, C. Ahn, J. C. Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting (IEDM)
Pages15.1.1-15.1.4
ISBN (Electronic)9781424474196
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Conference

Conference2010 IEEE International Electron Devices Meeting
Abbreviated titleIEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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  • Cite this

    Bazizi, E. M., Fazzini, P. F., Cristiano, F., Pakfar, A., Tavernier, C., Payet, F., Skotnicki, T., Zechner, C., Zographos, N., Matveev, D., Cowern, N. E. B., Bennett, N., Ahn, C., & Yoon, J. C. (2010). Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs. In 2010 IEEE International Electron Devices Meeting (IEDM) (pp. 15.1.1-15.1.4) https://doi.org/10.1109/IEDM.2010.5703365