Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

E. M. Bazizi; P. F. Fazzini; F. Cristiano; A. Pakfar; C. Tavernier; F. Payet; T. Skotnicki; C. Zechner; N. Zographos; D. Matveev; Nick E. B. Cowern; Nick Bennett; C. Ahn; J. C. Yoon

doi:10.1109/IEDM.2010.5703365

Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

E. M. Bazizi, P. F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, Nick E. B. Cowern, Nick Bennett, C. Ahn, J. C. Yoon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si_0.8Ge_0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting (IEDM)
Pages	15.1.1-15.1.4
ISBN (Electronic)	9781424474196
DOIs	https://doi.org/10.1109/IEDM.2010.5703365
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Conference

Conference	2010 IEEE International Electron Devices Meeting
Abbreviated title	IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1109/IEDM.2010.5703365

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Bazizi, E. M., Fazzini, P. F., Cristiano, F., Pakfar, A., Tavernier, C., Payet, F., Skotnicki, T., Zechner, C., Zographos, N., Matveev, D., Cowern, N. E. B., Bennett, N., Ahn, C., & Yoon, J. C. (2010). Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs. In 2010 IEEE International Electron Devices Meeting (IEDM) (pp. 15.1.1-15.1.4) https://doi.org/10.1109/IEDM.2010.5703365

@inproceedings{df6e5396928d49d7b907222e57ae9de5,

title = "Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs",

abstract = "Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.",

author = "Bazizi, {E. M.} and Fazzini, {P. F.} and F. Cristiano and A. Pakfar and C. Tavernier and F. Payet and T. Skotnicki and C. Zechner and N. Zographos and D. Matveev and Cowern, {Nick E. B.} and Nick Bennett and C. Ahn and Yoon, {J. C.}",

note = "INSPEC Accession Number: 11793357; 2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

year = "2010",

doi = "10.1109/IEDM.2010.5703365",

language = "English",

isbn = "9781442474185",

pages = "15.1.1--15.1.4",

booktitle = "2010 IEEE International Electron Devices Meeting (IEDM)",

}

Bazizi, EM, Fazzini, PF, Cristiano, F, Pakfar, A, Tavernier, C, Payet, F, Skotnicki, T, Zechner, C, Zographos, N, Matveev, D, Cowern, NEB, Bennett, N, Ahn, C & Yoon, JC 2010, Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs. in 2010 IEEE International Electron Devices Meeting (IEDM). pp. 15.1.1-15.1.4, 2010 IEEE International Electron Devices Meeting, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703365

TY - GEN

T1 - Transfer of physically-based models from process to device simulations

T2 - 2010 IEEE International Electron Devices Meeting

AU - Bazizi, E. M.

AU - Fazzini, P. F.

AU - Cristiano, F.

AU - Pakfar, A.

AU - Tavernier, C.

AU - Payet, F.

AU - Skotnicki, T.

AU - Zechner, C.

AU - Zographos, N.

AU - Matveev, D.

AU - Cowern, Nick E. B.

AU - Bennett, Nick

AU - Ahn, C.

AU - Yoon, J. C.

N1 - INSPEC Accession Number: 11793357

PY - 2010

Y1 - 2010

N2 - Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

AB - Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

UR - http://www.scopus.com/inward/record.url?scp=79951833697&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703365

DO - 10.1109/IEDM.2010.5703365

M3 - Conference contribution

AN - SCOPUS:79951833697

SN - 9781442474185

SP - 15.1.1-15.1.4

BT - 2010 IEEE International Electron Devices Meeting (IEDM)

Y2 - 6 December 2010 through 8 December 2010

ER -

Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

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ASJC Scopus subject areas

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