Towards terabit/s input to silicon VLSI - a demonstrator experiment

A. C. Walker, S. J. Fancey, M. G. Forbes, G. S. Buller, M. R. Taghizadeh, M. P Y Desmulliez, J. A B Dines, C. R. Stanley, G. Pennelli, A. Boyd, J. L. Pearson, P. Horan, D. Byrne, J. Hegarty, S. Eitel

Research output: Contribution to journalArticle

Abstract

The physical limit on electronic data communication rates between silicon chips is projected to be of the order of Tbit/s over cm-scale connections. The semiconductor industry predicts that this level of i/o is likely to be required in the near future. Free-space optical connections to silicon VLSI are potentially able to offer much higher data-rates than electrical interconnects and are promising for future high-performance electronic systems. We have assembled the components of an optoelectronic 15 Gbit/s crossbar switch designed to include, internally, an optical data rate to a hybrid InGaAs/silicon chip in the Tbit/s regime. Input to the demonstrator is by an 8×8 VCSEL array operating at 250 Mbit/s/channel, and these 64 channels are fanned out 8×8 times to give the high data rate onto the hybrid chip. This chip includes an array of 4096 InGaAs-based detectors flip chip bonded to silicon CMOS. The custom-designed CMOS performs packet routing under the control of an optical clock and the routed signals are output via differential modulator pairs, interlaced between the detectors on the InGaAs chip.

Original languageEnglish
Pages (from-to)460-464
Number of pages5
JournalProceedings of SPIE - the International Society for Optical Engineering
Volume4089
Publication statusPublished - 2000
EventOptics in Computing 2000 - Quebec City, Can
Duration: 18 Jun 200023 Jun 2000

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