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Towards SiGe terahertz VCSELs

  • R. W. Kelsall
  • , Z. Ikonic
  • , P. Harrison
  • , D. J. Paul
  • , S. A. Lynch
  • , R. Bates
  • , D. J. Norris
  • , S. L. Liew
  • , A. G. Cullis
  • , D. D. Arnone
  • , C. R. Pidgeon
  • , P. Murzyn
  • , D. J. Robbins
  • , R. A. Soref

Research output: Contribution to journalArticlepeer-review

Abstract

An overview of recent progress in p-Si/SiGe quantum well cascade structures intended for THz quantum cascade lasers is presented. Specific features of this system, which make it distinct from the more conventional GaAs/AlGaAs quantum cascades, are discussed both in terms of the physics involved and in terms of material issues.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalMaterials Science Forum
Volume453-454
Publication statusPublished - 2004
EventProgress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - Herceg Novi, Serbia and Montenegro
Duration: 15 Sept 200319 Sept 2003

Keywords

  • Hole Transport
  • Intersubband Transitions
  • Quantum Cascade Laser
  • SiGe

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