Abstract
An overview of recent progress in p-Si/SiGe quantum well cascade structures intended for THz quantum cascade lasers is presented. Specific features of this system, which make it distinct from the more conventional GaAs/AlGaAs quantum cascades, are discussed both in terms of the physics involved and in terms of material issues.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Materials Science Forum |
| Volume | 453-454 |
| Publication status | Published - 2004 |
| Event | Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - Herceg Novi, Serbia and Montenegro Duration: 15 Sept 2003 → 19 Sept 2003 |
Keywords
- Hole Transport
- Intersubband Transitions
- Quantum Cascade Laser
- SiGe
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