Towards SiGe terahertz VCSELs

R. W. Kelsall, Z. Ikonic, P. Harrison, D. J. Paul, S. A. Lynch, R. Bates, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, D. J. Robbins, R. A. Soref

Research output: Contribution to journalArticle

Abstract

An overview of recent progress in p-Si/SiGe quantum well cascade structures intended for THz quantum cascade lasers is presented. Specific features of this system, which make it distinct from the more conventional GaAs/AlGaAs quantum cascades, are discussed both in terms of the physics involved and in terms of material issues.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalMaterials Science Forum
Volume453-454
Publication statusPublished - 2004
EventProgress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V - Herceg Novi, Serbia and Montenegro
Duration: 15 Sep 200319 Sep 2003

Keywords

  • Hole Transport
  • Intersubband Transitions
  • Quantum Cascade Laser
  • SiGe

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    Kelsall, R. W., Ikonic, Z., Harrison, P., Paul, D. J., Lynch, S. A., Bates, R., Norris, D. J., Liew, S. L., Cullis, A. G., Arnone, D. D., Pidgeon, C. R., Murzyn, P., Robbins, D. J., & Soref, R. A. (2004). Towards SiGe terahertz VCSELs. Materials Science Forum, 453-454, 1-8.