Abstract
Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
Original language | English |
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Pages (from-to) | 1570-1577 |
Number of pages | 8 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 12 |
Issue number | 6 |
DOIs | |
Publication status | Published - Nov 2006 |
Keywords
- Boron
- Far infrared
- Germanium
- Impurity
- Lifetime
- Phosphorus
- Pump-probe
- Quantum cascade laser
- Resonant tunneling diode (RTD)
- Silicon
- Suicide
- Terahertz
- Waveguide