Toward silicon-based lasers for terahertz sources

Stephen A. Lynch, Douglas J. Paul, Paul Townsend, Guy Matmon, Zhang Suet, Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Jing Zhang, David J. Norris, Anthony G. Cullis, Carl R. Pidgeon, Pawel Murzyn, Ben Murdin, Mike Bain, Harry S. Gamble, Ming Zhao, Wei X. Ni

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.

Original languageEnglish
Pages (from-to)1570-1577
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number6
Publication statusPublished - Nov 2006


  • Boron
  • Far infrared
  • Germanium
  • Impurity
  • Lifetime
  • Phosphorus
  • Pump-probe
  • Quantum cascade laser
  • Resonant tunneling diode (RTD)
  • Silicon
  • Suicide
  • Terahertz
  • Waveguide


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