Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

S. J. Fancey, G. S. Buller, J. S. Massa, A. C. Walker, S. D. Perrin, A. J. Dann, M. J. Robertson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=1016 cm-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.

Original languageEnglish
Pages (from-to)269-273
Number of pages5
JournalJournal of Crystal Growth
Volume183
Issue number1-2
DOIs
Publication statusPublished - Jan 1998

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