Abstract
A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=1016 cm-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.
Original language | English |
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Pages (from-to) | 269-273 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 183 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Jan 1998 |