Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

S. J. Fancey; G. S. Buller; J. S. Massa; A. C. Walker; S. D. Perrin; A. J. Dann; M. J. Robertson

doi:10.1016/S0022-0248(97)00500-9

Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

S. J. Fancey, G. S. Buller, J. S. Massa, A. C. Walker, S. D. Perrin, A. J. Dann, M. J. Robertson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=10¹⁶ cm^-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.

Original language	English
Pages (from-to)	269-273
Number of pages	5
Journal	Journal of Crystal Growth
Volume	183
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(97)00500-9
Publication status	Published - Jan 1998

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@article{8eb0690755a947279b68255d2387f613,

title = "Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures",

abstract = "A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=1016 cm-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.",

author = "Fancey, {S. J.} and Buller, {G. S.} and Massa, {J. S.} and Walker, {A. C.} and Perrin, {S. D.} and Dann, {A. J.} and Robertson, {M. J.}",

year = "1998",

month = jan,

doi = "10.1016/S0022-0248(97)00500-9",

language = "English",

volume = "183",

pages = "269--273",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

AU - Fancey, S. J.

AU - Buller, G. S.

AU - Massa, J. S.

AU - Walker, A. C.

AU - Perrin, S. D.

AU - Dann, A. J.

AU - Robertson, M. J.

PY - 1998/1

Y1 - 1998/1

N2 - A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=1016 cm-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.

AB - A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e.=1016 cm-3) using a novel high-efficiency germanium photoncounting detector. The photoluminescence decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A.

U2 - 10.1016/S0022-0248(97)00500-9

DO - 10.1016/S0022-0248(97)00500-9

M3 - Article

VL - 183

SP - 269

EP - 273

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -

Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

Abstract

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