Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 1.3-μm wavelengths by use of germanium single-photon avalanche photodiodes

G. S. Buller, S. J. Fancey, J. S. Massa, A. C. Walker, S. Cova, A. Lacaita

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 1018-1015 cm-3. The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes. © 1996 Optical Society of America.

Original languageEnglish
Pages (from-to)916-921
Number of pages6
JournalApplied Optics
Volume35
Issue number6
Publication statusPublished - 20 Feb 1996

Keywords

  • Germanium avalanche photodiodes
  • InGaAs/InP
  • Multiple quantum wells
  • Time-resolved photoluminescence

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