A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 1018-1015 cm-3. The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes. © 1996 Optical Society of America.
|Number of pages||6|
|Publication status||Published - 20 Feb 1996|
- Germanium avalanche photodiodes
- Multiple quantum wells
- Time-resolved photoluminescence