Time-resolved photoluminescence measurements of in As self-assembled quantum dots

S. Pellegrini, G. S. Buller, L. Ya Karachinsky, A. S. Shkolnik, N. Yu Gordeev, G. G. Zegrya, V. P. Evtikhiev, I. R. Sellers, M. S. Skolnick, H. Y. Liu, M. Hopkinson

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3 Citations (Scopus)


Time-resolved photoluminescence decay measurements have been performed on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate mis-orientation alone, but otherwise under identical growth conditions. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident energy density range of 0.79 pJcm-2 - 40 nJcm -2 at a temperature of 77 K were obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident bi-exponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier re-capturing and indirect radiative recombination processes. Also experimental evidence of the effect of the AlGaAs barrier in InAs QDs emitting in the wavelength range 1200-1300nm is presented. Time-resolved photoluminescence measurements have been performed on samples with different compositions of Al in the barrier. A full discussion of the lifetimes of these near infra-red emitting dots will be presented.

Original languageEnglish
Article number45
Pages (from-to)309-317
Number of pages9
JournalProceedings of SPIE - the International Society for Optical Engineering
Publication statusPublished - 2005
EventUltrafast Phenomena in Semiconductors and Nanostructure - San Jose, CA, United States
Duration: 24 Jan 200527 Jan 2005


  • Heterostructure
  • Self-assembled quantum dots
  • Time-resolved photoluminescence


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