Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots

I. Gontijo, G. S. Buller, J. S. Massa, A. C. Walker, S. V. Zaitsev, N. Yu Gordeev, V. M. Ustinov, P. S. Kop'ev

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17 Citations (Scopus)

Abstract

The relaxation mechanisms of an array of 10 vertically coupled layers of InGaAs/AlGaAs quantum dots were studied by time-resolved photoluminescencc. Both resonant and non-resonant excitation were employed and the photoluminescence (PL) intensity in the non-resonant case is a factor of 200 larger than the intensity with resonant excitation. The results obtained in the non-resonant pumping experiment were analysed with a rate equation model. It was found that the PL decay time increases rapidly with the wavelength of detection. Large carrier capture cross-sections [(2.5±0.9) × 10-5 cm3/s] were deduced, resulting in a capture time of 1 ps for a carrier concentration of 4 × 1016cm-3. A very fast PL risetime was observed with resonant pumping, ruling out a phonon bottleneck effect in these samples. The decay times at a given wavelength are always shorter for resonant than for non-resonant excitation and their difference increases rapidly with wavelength. This is interpreted in terms of a state filling effect for the non-resonant case. © 1999 Publication Board, Japanese Journal of Applied Physics.

Original languageEnglish
Pages (from-to)674-680
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number2 A
Publication statusPublished - 1999

Keywords

  • Carrier dynamics
  • Diode lasers
  • III-V semiconductors
  • Photoluminescence
  • Quantum dots

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