TIME RESOLVED MEASUREMENTS OF CROSS-WELL TRANSPORT IN A MULTIPLE QUANTUM-WELL P-I-N MODULATOR AT HIGH PHOTOGENERATED CARRIER DENSITIES

A  MILLER; C B  PARK; P  LIKAMWA

TIME RESOLVED MEASUREMENTS OF CROSS-WELL TRANSPORT IN A MULTIPLE QUANTUM-WELL P-I-N MODULATOR AT HIGH PHOTOGENERATED CARRIER DENSITIES

A MILLER, C B PARK, P LIKAMWA

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.

Original language	English
Pages (from-to)	97-99
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	1
Publication status	Published - 6 Jan 1992

Cite this

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title = "TIME RESOLVED MEASUREMENTS OF CROSS-WELL TRANSPORT IN A MULTIPLE QUANTUM-WELL P-I-N MODULATOR AT HIGH PHOTOGENERATED CARRIER DENSITIES",

abstract = "Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.",

author = "A MILLER and PARK, \{C B\} and P LIKAMWA",

year = "1992",

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journal = "Applied Physics Letters",

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AU - PARK, C B

AU - LIKAMWA, P

PY - 1992/1/6

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N2 - Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.

AB - Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.

M3 - Article

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SP - 97

EP - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

TIME RESOLVED MEASUREMENTS OF CROSS-WELL TRANSPORT IN A MULTIPLE QUANTUM-WELL P-I-N MODULATOR AT HIGH PHOTOGENERATED CARRIER DENSITIES

Abstract

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