THz intersubband dynamics in p-Si/SiGe quantum well structures

C. R. Pidgeon, P. Murzyn, J. P R Wells, I. V. Bradley, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins, D. Norris, A. G. Cullis

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Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??LO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of ~10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)904-907
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - Mar 2002

Keywords

  • Alloy scattering
  • Intersubband absorption
  • Si/SiGe

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    Pidgeon, C. R., Murzyn, P., Wells, J. P. R., Bradley, I. V., Ikonic, Z., Kelsall, R. W., Harrison, P., Lynch, S. A., Paul, D. J., Arnone, D. D., Robbins, D. J., Norris, D., & Cullis, A. G. (2002). THz intersubband dynamics in p-Si/SiGe quantum well structures. Physica E: Low-Dimensional Systems and Nanostructures, 13(2-4), 904-907. https://doi.org/10.1016/S1386-9477(02)00231-X