THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon, P. Murzyn, J. P R Wells, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins

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Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Original languageEnglish
Pages (from-to)381-385
Number of pages5
JournalPhysica Status Solidi B - Basic Research
Volume237
Issue number1
DOIs
Publication statusPublished - May 2003

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    Pidgeon, C. R., Murzyn, P., Wells, J. P. R., Ikonic, Z., Kelsall, R. W., Harrison, P., Lynch, S. A., Paul, D. J., Arnone, D. D., & Robbins, D. J. (2003). THz intersubband dynamics in p-Si/SiGe quantum well emitter structures. Physica Status Solidi B - Basic Research, 237(1), 381-385. https://doi.org/10.1002/pssb.200301784