THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon; P. Murzyn; J. P R Wells; Z. Ikonic; R. W. Kelsall; P. Harrison; S. A. Lynch; D. J. Paul; D. D. Arnone; D. J. Robbins

doi:10.1002/pssb.200301784

THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

C. R. Pidgeon, P. Murzyn, J. P R Wells, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??_LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si_0.7Ge_0.3 wells.

Original language	English
Pages (from-to)	381-385
Number of pages	5
Journal	Physica Status Solidi B - Basic Research
Volume	237
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200301784
Publication status	Published - May 2003

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title = "THz intersubband dynamics in p-Si/SiGe quantum well emitter structures",

abstract = "We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.",

author = "Pidgeon, {C. R.} and P. Murzyn and Wells, {J. P R} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Lynch, {S. A.} and Paul, {D. J.} and Arnone, {D. D.} and Robbins, {D. J.}",

year = "2003",

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doi = "10.1002/pssb.200301784",

language = "English",

volume = "237",

pages = "381--385",

journal = "Physica Status Solidi B - Basic Research",

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TY - JOUR

T1 - THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Wells, J. P R

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Lynch, S. A.

AU - Paul, D. J.

AU - Arnone, D. D.

AU - Robbins, D. J.

PY - 2003/5

Y1 - 2003/5

N2 - We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

AB - We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ?? < ??LO. utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

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U2 - 10.1002/pssb.200301784

DO - 10.1002/pssb.200301784

M3 - Article

SN - 1521-3951

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EP - 385

JO - Physica Status Solidi B - Basic Research

JF - Physica Status Solidi B - Basic Research

IS - 1

ER -

THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

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