Three-dimensional nanoscale subsurface optical imaging of silicon circuits

E. Ramsay, K. A. Serrels, M. J. Thomson, A. J. Waddie, M. R. Taghizadeh, R. J. Warburton, D. T. Reid

Research output: Contribution to journalArticle

Abstract

Three-dimensional subsurface imaging through the back side of a silicon flip chip is reported with a diffraction-limited lateral resolution of 166 nm and an axial performance capable of resolving features only 100 nm deep. This performance was achieved by implementing sample-scanned two-photon optical beam induced current microscopy using a silicon solid immersion lens and a peak detection algorithm. The excitation source was a 1530 nm erbium:fiber laser, and the lateral optical resolution obtained corresponds to 11% of the free-space wavelength. © 2007 American Institute of Physics.

Original languageEnglish
Article number131101
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
Publication statusPublished - 2007

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    Ramsay, E., Serrels, K. A., Thomson, M. J., Waddie, A. J., Taghizadeh, M. R., Warburton, R. J., & Reid, D. T. (2007). Three-dimensional nanoscale subsurface optical imaging of silicon circuits. Applied Physics Letters, 90(13), [131101]. https://doi.org/10.1063/1.2716344