Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

E. Ramsay, K. A. Serrels, M. J. Thomson, A. J. Waddie, R. J. Warburton, M. R. Taghizadeh, D. T. Reid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By implementing two-photon optical-beam-induced-current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height. Copyright © 2007 ASM International® All rights reserved.

Original languageEnglish
Title of host publicationISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis
Pages77-80
Number of pages4
Publication statusPublished - 2007
Event33rd International Symposium for Testing and Failure Analysis - San Jose, CA, United States
Duration: 4 Nov 20078 Nov 2007

Conference

Conference33rd International Symposium for Testing and Failure Analysis
Abbreviated titleISTFA 2007
CountryUnited States
CitySan Jose, CA
Period4/11/078/11/07

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  • Cite this

    Ramsay, E., Serrels, K. A., Thomson, M. J., Waddie, A. J., Warburton, R. J., Taghizadeh, M. R., & Reid, D. T. (2007). Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method. In ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis (pp. 77-80)