Three-dimensional gallium sulphide open frameworks

Paz Vaqueiro; M. Lucia Romero

doi:10.1016/j.jpcs.2006.11.031

Three-dimensional gallium sulphide open frameworks

Paz Vaqueiro, M. Lucia Romero

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [C₄ NH₁₂]₆ [Ga₁₀ S₁₈] (1) and [C₄ NH₁₂]₁₂ [Ga₂₀ S_35.5 (S₃)_0.5 O] (2) contain supertetrahedral T3 clusters, while in the isostructural compounds [C₄ NH₁₂]₁₆ [Ga₁₀ S₁₈ M₄ Ga₁₆ S₃₃] (M = Co (3), Zn (4)), T3 and T4 clusters alternate. These materials exhibit three-dimensional frameworks, with topologies consisting of two interpenetrating diamond lattices, and contain over 50% of solvent accessible void space. UV-Vis diffuse reflectance measurements indicate that these compounds are semiconducting, with band gaps over the range 3.4-4.1 eV. © 2006 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1239-1243
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	68
Issue number	5-6
DOIs	https://doi.org/10.1016/j.jpcs.2006.11.031
Publication status	Published - May 2007

Keywords

A. Chalcogenides
A. Microporous materials
C. X-ray diffraction
D. Crystal structure

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10.1016/j.jpcs.2006.11.031

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title = "Three-dimensional gallium sulphide open frameworks",

abstract = "The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [C4 NH12]6 [Ga10 S18] (1) and [C4 NH12]12 [Ga20 S35.5 (S3)0.5 O] (2) contain supertetrahedral T3 clusters, while in the isostructural compounds [C4 NH12]16 [Ga10 S18 M4 Ga16 S33] (M = Co (3), Zn (4)), T3 and T4 clusters alternate. These materials exhibit three-dimensional frameworks, with topologies consisting of two interpenetrating diamond lattices, and contain over 50% of solvent accessible void space. UV-Vis diffuse reflectance measurements indicate that these compounds are semiconducting, with band gaps over the range 3.4-4.1 eV. {\textcopyright} 2006 Elsevier Ltd. All rights reserved.",

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AU - Vaqueiro, Paz

AU - Romero, M. Lucia

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AB - The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [C4 NH12]6 [Ga10 S18] (1) and [C4 NH12]12 [Ga20 S35.5 (S3)0.5 O] (2) contain supertetrahedral T3 clusters, while in the isostructural compounds [C4 NH12]16 [Ga10 S18 M4 Ga16 S33] (M = Co (3), Zn (4)), T3 and T4 clusters alternate. These materials exhibit three-dimensional frameworks, with topologies consisting of two interpenetrating diamond lattices, and contain over 50% of solvent accessible void space. UV-Vis diffuse reflectance measurements indicate that these compounds are semiconducting, with band gaps over the range 3.4-4.1 eV. © 2006 Elsevier Ltd. All rights reserved.

KW - A. Chalcogenides

KW - A. Microporous materials

KW - C. X-ray diffraction

KW - D. Crystal structure

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JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

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Three-dimensional gallium sulphide open frameworks

Abstract

Keywords

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