Third order susceptibility of III-V semiconductors in the true continuum near the band edge

P K Sen

Third order susceptibility of III-V semiconductors in the true continuum near the band edge

P K Sen

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Based upon the purely coherent radiation-exciton interaction and using the time dependent perturbation theory, an independent analytical investigation of the third order susceptibility ?⁽³⁾ has been made for a semiconductor in the band-edge region. The possibility of a change in sign of ?⁽³⁾ is noted when the pump energy is increased from below the renormalized band gap energy to exceed it. Numerical estimates are made for InSb, GaAs, GaSb and InAs when the energy difference is of the order of crystal exciton Rydberg in the true continum. © 1982.

Original language	English
Pages (from-to)	141-146
Number of pages	6
Journal	Solid State Communications
Volume	43
Issue number	2
Publication status	Published - Jul 1982

Cite this

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title = "Third order susceptibility of III-V semiconductors in the true continuum near the band edge",

abstract = "Based upon the purely coherent radiation-exciton interaction and using the time dependent perturbation theory, an independent analytical investigation of the third order susceptibility ?(3) has been made for a semiconductor in the band-edge region. The possibility of a change in sign of ?(3) is noted when the pump energy is increased from below the renormalized band gap energy to exceed it. Numerical estimates are made for InSb, GaAs, GaSb and InAs when the energy difference is of the order of crystal exciton Rydberg in the true continum. {\textcopyright} 1982.",

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year = "1982",

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language = "English",

volume = "43",

pages = "141--146",

journal = "Solid State Communications",

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T1 - Third order susceptibility of III-V semiconductors in the true continuum near the band edge

AU - Sen, P K

PY - 1982/7

Y1 - 1982/7

N2 - Based upon the purely coherent radiation-exciton interaction and using the time dependent perturbation theory, an independent analytical investigation of the third order susceptibility ?(3) has been made for a semiconductor in the band-edge region. The possibility of a change in sign of ?(3) is noted when the pump energy is increased from below the renormalized band gap energy to exceed it. Numerical estimates are made for InSb, GaAs, GaSb and InAs when the energy difference is of the order of crystal exciton Rydberg in the true continum. © 1982.

AB - Based upon the purely coherent radiation-exciton interaction and using the time dependent perturbation theory, an independent analytical investigation of the third order susceptibility ?(3) has been made for a semiconductor in the band-edge region. The possibility of a change in sign of ?(3) is noted when the pump energy is increased from below the renormalized band gap energy to exceed it. Numerical estimates are made for InSb, GaAs, GaSb and InAs when the energy difference is of the order of crystal exciton Rydberg in the true continum. © 1982.

UR - https://www.scopus.com/pages/publications/0020163152

M3 - Article

SN - 0038-1098

VL - 43

SP - 141

EP - 146

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Third order susceptibility of III-V semiconductors in the true continuum near the band edge

Abstract

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