Third order susceptibility of III-V semiconductors in the true continuum near the band edge

P K Sen

Research output: Contribution to journalArticle

Abstract

Based upon the purely coherent radiation-exciton interaction and using the time dependent perturbation theory, an independent analytical investigation of the third order susceptibility ?(3) has been made for a semiconductor in the band-edge region. The possibility of a change in sign of ?(3) is noted when the pump energy is increased from below the renormalized band gap energy to exceed it. Numerical estimates are made for InSb, GaAs, GaSb and InAs when the energy difference is of the order of crystal exciton Rydberg in the true continum. © 1982.

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalSolid State Communications
Volume43
Issue number2
Publication statusPublished - Jul 1982

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