Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared

S. Hughes; C. M. Ciesla; B. N. Murdin; C. R. Pidgeon; D. A. Jaroszynski; R. Prazeres

doi:10.1063/1.359964

Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared

S. Hughes, C. M. Ciesla, B. N. Murdin, C. R. Pidgeon, D. A. Jaroszynski, R. Prazeres

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Picosecond excitation-probe measurements using a far-infrared free-electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 µm. A theoretical model is described to determine the cw third-order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be -8.6×10^-11 m² V^-2 and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the ?⁽³⁾ of the transient grating which was found to be -7.2×10^-13 m² V^-2. The measurements were performed at room temperature on undoped bulk InSb. © 1995 American Institute of Physics.

Original language	English
Pages (from-to)	3371-3375
Number of pages	5
Journal	Journal of Applied Physics
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.359964
Publication status	Published - 1995

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title = "Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared",

abstract = "Picosecond excitation-probe measurements using a far-infrared free-electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 µm. A theoretical model is described to determine the cw third-order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be -8.6×10-11 m2 V-2 and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the ?(3) of the transient grating which was found to be -7.2×10-13 m2 V-2. The measurements were performed at room temperature on undoped bulk InSb. {\textcopyright} 1995 American Institute of Physics.",

author = "S. Hughes and Ciesla, {C. M.} and Murdin, {B. N.} and Pidgeon, {C. R.} and Jaroszynski, {D. A.} and R. Prazeres",

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TY - JOUR

T1 - Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared

AU - Hughes, S.

AU - Ciesla, C. M.

AU - Murdin, B. N.

AU - Pidgeon, C. R.

AU - Jaroszynski, D. A.

AU - Prazeres, R.

PY - 1995

Y1 - 1995

N2 - Picosecond excitation-probe measurements using a far-infrared free-electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 µm. A theoretical model is described to determine the cw third-order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be -8.6×10-11 m2 V-2 and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the ?(3) of the transient grating which was found to be -7.2×10-13 m2 V-2. The measurements were performed at room temperature on undoped bulk InSb. © 1995 American Institute of Physics.

AB - Picosecond excitation-probe measurements using a far-infrared free-electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 µm. A theoretical model is described to determine the cw third-order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be -8.6×10-11 m2 V-2 and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the ?(3) of the transient grating which was found to be -7.2×10-13 m2 V-2. The measurements were performed at room temperature on undoped bulk InSb. © 1995 American Institute of Physics.

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DO - 10.1063/1.359964

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared

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