TY - JOUR
T1 - Thermoelectric properties of the aliovalent half-Heusler alloy Zn0.5Ti0.5NiSb with intrinsic low thermal conductivity
AU - Kennedy, Blair F.
AU - Kimber, Simon A. J.
AU - Checchia, Stefano
AU - Shawon, A. K. M. Ashiquzzaman
AU - Zevalkink, Alexandra
AU - Suard, Emmanuelle
AU - Buckman, Jim
AU - Bos, Jan Willem G.
N1 - Funding Information:
The EPSRC is acknowledged for funding the research into new half-Heusler materials, through award (EP/N01717X/1) and for a PhD studentship for B. F. K. The ILL is acknowledged for easy-access beam time on the super-D2B instrument.48 The ESRF is acknowledged for provision of inhouse beamtime (proposal IH-HC-3871).49
Publisher Copyright:
© 2023 The Royal Society of Chemistry
PY - 2023/11/21
Y1 - 2023/11/21
N2 - Using mixtures of aliovalent elements to achieve a valence balanced electronic state is a rapidly emerging area in half-Heusler thermoelectric materials research. Here, we report on Zn0.5Ti0.5NiSb, a combination of ZnNiSb and TiNiSb, which by adjusting the Zn/Ti-ratio can be made p- and n-type, achieving peak zT = 0.18 at 793 K and zT = 0.33 at 700 K, respectively. These promising values are underpinned by a low lattice thermal conductivity, κL = 2.7 W m−1 K−1 at 340 K, similar for all samples, decreasing to 1.25 W m−1 K−1 at 793 K. Transport data reveal similar weighted electronic mobilities for p- and n-type samples, suggesting similar zT should be possible. For both polarities, a transition to degenerate conduction is observed, superposed on intrinsic semiconducting behaviour with a bandgap Eg = 0.4 eV. Neutron and synchrotron X-ray diffraction experiments, including total scattering, indicate the absence of interstitial metals and do not reveal strong local structural variations. The absence of substantial mass disorder and lattice strain points towards bond disorder as a possible origin for the low κL. This work describes a new materials system and provides further insight into the impact of aliovalent alloying in the half-Heusler structure.
AB - Using mixtures of aliovalent elements to achieve a valence balanced electronic state is a rapidly emerging area in half-Heusler thermoelectric materials research. Here, we report on Zn0.5Ti0.5NiSb, a combination of ZnNiSb and TiNiSb, which by adjusting the Zn/Ti-ratio can be made p- and n-type, achieving peak zT = 0.18 at 793 K and zT = 0.33 at 700 K, respectively. These promising values are underpinned by a low lattice thermal conductivity, κL = 2.7 W m−1 K−1 at 340 K, similar for all samples, decreasing to 1.25 W m−1 K−1 at 793 K. Transport data reveal similar weighted electronic mobilities for p- and n-type samples, suggesting similar zT should be possible. For both polarities, a transition to degenerate conduction is observed, superposed on intrinsic semiconducting behaviour with a bandgap Eg = 0.4 eV. Neutron and synchrotron X-ray diffraction experiments, including total scattering, indicate the absence of interstitial metals and do not reveal strong local structural variations. The absence of substantial mass disorder and lattice strain points towards bond disorder as a possible origin for the low κL. This work describes a new materials system and provides further insight into the impact of aliovalent alloying in the half-Heusler structure.
UR - http://www.scopus.com/inward/record.url?scp=85175832847&partnerID=8YFLogxK
U2 - 10.1039/d3ta04514e
DO - 10.1039/d3ta04514e
M3 - Article
AN - SCOPUS:85175832847
SN - 2050-7488
VL - 11
SP - 23566
EP - 23575
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 43
ER -