Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

Son D. N. Luu; Paz Vaqueiro

doi:10.1088/0268-1242/29/6/064002

Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

Son D. N. Luu, Paz Vaqueiro

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder x-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Original language	English
Article number	064002
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	29
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/29/6/064002
Publication status	Published - Jun 2014

Keywords

thermoelectric material
oxyselenide
BiCuSeO
thermal conductivity
Seebeck coefficient
OPTOELECTRONIC PROPERTIES
ELECTRONIC-STRUCTURES
BICUSEO OXYSELENIDES
TRANSPORT-PROPERTIES
DOPED BICUSEO
PERFORMANCE
CRYSTAL
CU
OXYCHALCOGENIDES
SYSTEM

Access to Document

10.1088/0268-1242/29/6/064002

Cite this

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title = "Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)",

abstract = "Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder x-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.",

keywords = "thermoelectric material, oxyselenide, BiCuSeO, thermal conductivity, Seebeck coefficient, OPTOELECTRONIC PROPERTIES, ELECTRONIC-STRUCTURES, BICUSEO OXYSELENIDES, TRANSPORT-PROPERTIES, DOPED BICUSEO, PERFORMANCE, CRYSTAL, CU, OXYCHALCOGENIDES, SYSTEM",

author = "Luu, {Son D. N.} and Paz Vaqueiro",

year = "2014",

month = jun,

doi = "10.1088/0268-1242/29/6/064002",

language = "English",

volume = "29",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing ",

number = "6",

}

TY - JOUR

T1 - Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

AU - Luu, Son D. N.

AU - Vaqueiro, Paz

PY - 2014/6

Y1 - 2014/6

N2 - Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder x-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

AB - Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder x-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

KW - thermoelectric material

KW - oxyselenide

KW - BiCuSeO

KW - thermal conductivity

KW - Seebeck coefficient

KW - OPTOELECTRONIC PROPERTIES

KW - ELECTRONIC-STRUCTURES

KW - BICUSEO OXYSELENIDES

KW - TRANSPORT-PROPERTIES

KW - DOPED BICUSEO

KW - PERFORMANCE

KW - CRYSTAL

KW - CU

KW - OXYCHALCOGENIDES

KW - SYSTEM

U2 - 10.1088/0268-1242/29/6/064002

DO - 10.1088/0268-1242/29/6/064002

M3 - Article

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 064002

ER -