Abstract
Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder x-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.
Original language | English |
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Article number | 064002 |
Number of pages | 5 |
Journal | Semiconductor Science and Technology |
Volume | 29 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 2014 |
Keywords
- thermoelectric material
- oxyselenide
- BiCuSeO
- thermal conductivity
- Seebeck coefficient
- OPTOELECTRONIC PROPERTIES
- ELECTRONIC-STRUCTURES
- BICUSEO OXYSELENIDES
- TRANSPORT-PROPERTIES
- DOPED BICUSEO
- PERFORMANCE
- CRYSTAL
- CU
- OXYCHALCOGENIDES
- SYSTEM