Thermal stability of IGBT high-frequency operation

Kuang Sheng; Stephen J. Finney; Barry W. Williams

doi:10.1109/41.824018

Thermal stability of IGBT high-frequency operation

Kuang Sheng, Stephen J. Finney, Barry W. Williams

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.

Original language	English
Pages (from-to)	9-16
Number of pages	8
Journal	IEEE Transactions on Industrial Electronics
Volume	47
Issue number	1
DOIs	https://doi.org/10.1109/41.824018
Publication status	Published - Feb 2000

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10.1109/41.824018

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title = "Thermal stability of IGBT high-frequency operation",

abstract = "Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.",

author = "Kuang Sheng and Finney, \{Stephen J.\} and Williams, \{Barry W.\}",

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AU - Sheng, Kuang

AU - Finney, Stephen J.

AU - Williams, Barry W.

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N2 - Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.

AB - Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.

UR - https://www.scopus.com/pages/publications/0034135728

U2 - 10.1109/41.824018

DO - 10.1109/41.824018

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VL - 47

SP - 9

EP - 16

JO - IEEE Transactions on Industrial Electronics

JF - IEEE Transactions on Industrial Electronics

IS - 1

ER -

Thermal stability of IGBT high-frequency operation

Abstract

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