Thermal stability of IGBT high-frequency operation

Kuang Sheng, Stephen J. Finney, Barry W. Williams

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.

Original languageEnglish
Pages (from-to)9-16
Number of pages8
JournalIEEE Transactions on Industrial Electronics
Issue number1
Publication statusPublished - Feb 2000


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