Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT's at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.
|Number of pages||8|
|Journal||IEEE Transactions on Industrial Electronics|
|Publication status||Published - Feb 2000|