Thermal dehydrogenation of polysilane

P. John, B. C. Cowie, I. M. Odeh

Research output: Contribution to journalArticle

Abstract

The isochronal thermal decomposition of polysilane, -(SiH2)n− has been investigated at temperatures up to 335°C by in situ infrared spectroscopy. The studies were performed, in vacuo, on compressed discs of polysilane in a KBr matrix. Dehydrogenation was measured by the reduction of the infrared stretching ωs(2100 cm−1), bending ωb(910 cm−1), wagging ωw(865 cm−1) and rocking ωr(650 cm−1) integrated band intensities. The wavenumbers of the infrared-active modes of -(SiH2)n− given in parenthesis correspond to room temperature samples. Loss of hydrogen occurs at relatively low temperatures, ca. 140−200°C, and is essentially complete at 335°C. The integrated intensities of each band show an equal decrease with time. However, the peak position of the essentially degenerate symmetric and asymmetric stretching mode shifted systematically to lower wavenumbers in the region 2100 cm−1−2080 cm−1 on dehydrogenation. No shift was effected in the doublet of peaks in the range 800−950 cm−1 under the same conditions. The width (f.w.h.m.) of the 650 cm−1 band decreased with a reduction in the hydrogen content. This band exhibited a slight red shift of 10 cm−1 on dehydrogenation. Preliminary studies of the oxidized polysilane films demonstrated that rearrangement of [SiH2O] groupings to [SiH2O2] groupings takes place at elevated temperatures.

Original languageEnglish
Pages (from-to)559-564
Number of pages6
JournalPhilosophical Magazine B
Volume49
Issue number6
DOIs
Publication statusPublished - 1984

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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