Abstract
A theoretical analysis of the many-body effects in the band-edge absorption spectra of highly excited type-I and type-II semiconductor quantum-well structures is presented. The situation of a homogeneous electron-hole plasma in a usual type-I structure is compared and contrasted to the situation in a type-II structure, where the electron and hole plasmas are spatially separated into adjacent layers. The plasma effects are determined through numerical solutions of a generalized Wannier equation, which accounts for dynamical exchange and screening effects as well as Pauli blocking. In the description of dynamical screening, an alternative to the so-called Shindo approximation is developed. The induced electric-field effects in the type-II systems are investigated by solving the coupled Schrodinger and Poisson equations for the charge carriers.
| Original language | English |
|---|---|
| Pages (from-to) | 3031-3042 |
| Number of pages | 12 |
| Journal | Physical Review B: Condensed Matter and Materials Physics |
| Volume | 44 |
| Issue number | 7 |
| Publication status | Published - 15 Aug 1991 |