THEORY OF BAND-EDGE OPTICAL NONLINEARITIES IN TYPE-I AND TYPE-II QUANTUM-WELL STRUCTURES

R BINDER, I GALBRAITH, S W KOCH

Research output: Contribution to journalArticle

Abstract

A theoretical analysis of the many-body effects in the band-edge absorption spectra of highly excited type-I and type-II semiconductor quantum-well structures is presented. The situation of a homogeneous electron-hole plasma in a usual type-I structure is compared and contrasted to the situation in a type-II structure, where the electron and hole plasmas are spatially separated into adjacent layers. The plasma effects are determined through numerical solutions of a generalized Wannier equation, which accounts for dynamical exchange and screening effects as well as Pauli blocking. In the description of dynamical screening, an alternative to the so-called Shindo approximation is developed. The induced electric-field effects in the type-II systems are investigated by solving the coupled Schrodinger and Poisson equations for the charge carriers.

Original languageEnglish
Pages (from-to)3031-3042
Number of pages12
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume44
Issue number7
Publication statusPublished - 15 Aug 1991

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