TY - JOUR
T1 - Theoretical Analysis of AlAs0.56 Sb0.44 Single Photon Avalanche Diodes with High Breakdown Probability
AU - Ahmed, Jamal
AU - Xie, Shiyu
AU - Liang, Baolai
AU - Yi, Xin
AU - Jin, Xiao
AU - Kesaria, Manoj
AU - David, John P. R.
AU - Huffaker, Diana L.
N1 - Funding Information:
Manuscript received November 3, 2020; revised January 4, 2021 and January 28, 2021; accepted January 31, 2021. Date of publication February 10, 2021; date of current version February 23, 2021. This work was supported in part by the National Science Foundation under Grant ECCS-1810507, and in part by the European Regional Development Fund under Grant ERDF 80762-CU-039. (Corresponding author: Shiyu Xie.) Jamal Ahmed, Shiyu Xie, and Manoj Kesaria are with the School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K. (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 1965-2012 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/4
Y1 - 2021/4
N2 - Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients (α and β respectively). The α β ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.
AB - Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients (α and β respectively). The α β ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.
KW - Avalanche breakdown probability
KW - single photon avalanche diode
UR - http://www.scopus.com/inward/record.url?scp=85100841058&partnerID=8YFLogxK
U2 - 10.1109/JQE.2021.3058356
DO - 10.1109/JQE.2021.3058356
M3 - Article
AN - SCOPUS:85100841058
SN - 0018-9197
VL - 57
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 2
M1 - 9351996
ER -