The role of C2 in nanocrystalline diamond growth

J. R. Rabeau; P. John; J. I B Wilson; Y. Fan

doi:10.1063/1.1810637

The role of C₂ in nanocrystalline diamond growth

J. R. Rabeau, P. John, J. I B Wilson, Y. Fan

School of Engineering & Physical Sciences

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Abstract

This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapor deposition reactor. NCD films were grown using Ar/H₂/CH₄ and He/H₂/CH₄ gas compositions. The resulting films were characterized using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01-0.3 µm/h, and sp³- and sp²-bonded carbon content consistent with that expected for NCD. The C₂ Swan band (d³II_g harr; a³II_u) was probed using cavity ring-down spectroscopy to measure the absolute C₂(a) number density in the plasma during diamond film growth. The number density in the Ar/H₂/CH₄ plasmas was in the range from 2 to 4 × 10¹² cm^-3, but found to be present in quantities too low to measure in the He/H₂/CH₄ plasmas. Optical emission spectrometry was employed to determine the relative densities of the C ₂ excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C₂ does not play a major role in the growth of nanocrystalline diamond. © 2004 American Institute of Physics.

Original language	English
Pages (from-to)	6724-6732
Number of pages	9
Journal	Journal of Applied Physics
Volume	96
Issue number	11
DOIs	https://doi.org/10.1063/1.1810637
Publication status	Published - 1 Dec 2004

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@article{e4ad2caa3a164381b326e9fdfa268169,

title = "The role of C2 in nanocrystalline diamond growth",

abstract = "This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapor deposition reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterized using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01-0.3 µm/h, and sp3- and sp2-bonded carbon content consistent with that expected for NCD. The C2 Swan band (d3IIg harr; a3IIu) was probed using cavity ring-down spectroscopy to measure the absolute C2(a) number density in the plasma during diamond film growth. The number density in the Ar/H2/CH4 plasmas was in the range from 2 to 4 × 1012 cm-3, but found to be present in quantities too low to measure in the He/H2/CH4 plasmas. Optical emission spectrometry was employed to determine the relative densities of the C 2 excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C2 does not play a major role in the growth of nanocrystalline diamond. {\textcopyright} 2004 American Institute of Physics.",

author = "Rabeau, {J. R.} and P. John and Wilson, {J. I B} and Y. Fan",

year = "2004",

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doi = "10.1063/1.1810637",

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journal = "Journal of Applied Physics",

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T1 - The role of C2 in nanocrystalline diamond growth

AU - Rabeau, J. R.

AU - John, P.

AU - Wilson, J. I B

AU - Fan, Y.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapor deposition reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterized using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01-0.3 µm/h, and sp3- and sp2-bonded carbon content consistent with that expected for NCD. The C2 Swan band (d3IIg harr; a3IIu) was probed using cavity ring-down spectroscopy to measure the absolute C2(a) number density in the plasma during diamond film growth. The number density in the Ar/H2/CH4 plasmas was in the range from 2 to 4 × 1012 cm-3, but found to be present in quantities too low to measure in the He/H2/CH4 plasmas. Optical emission spectrometry was employed to determine the relative densities of the C 2 excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C2 does not play a major role in the growth of nanocrystalline diamond. © 2004 American Institute of Physics.

AB - This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapor deposition reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterized using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01-0.3 µm/h, and sp3- and sp2-bonded carbon content consistent with that expected for NCD. The C2 Swan band (d3IIg harr; a3IIu) was probed using cavity ring-down spectroscopy to measure the absolute C2(a) number density in the plasma during diamond film growth. The number density in the Ar/H2/CH4 plasmas was in the range from 2 to 4 × 1012 cm-3, but found to be present in quantities too low to measure in the He/H2/CH4 plasmas. Optical emission spectrometry was employed to determine the relative densities of the C 2 excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C2 does not play a major role in the growth of nanocrystalline diamond. © 2004 American Institute of Physics.

U2 - 10.1063/1.1810637

DO - 10.1063/1.1810637

M3 - Article

SN - 0021-8979

VL - 96

SP - 6724

EP - 6732

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

The role of C2 in nanocrystalline diamond growth

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The role of C₂ in nanocrystalline diamond growth