Abstract
Investigation of acceptor impurity levels in phosphorus implanted- and plasma-doped ZnSe/GaAs epitaxial layers grown by molecular-beam epitaxy has been performed using low temperature photoluminescence (PL) spectroscopy. It is shown that at least for weak P doping, the properties of phosphorus are similar to those of other effective mass substitutional acceptors in ZnSe. © 1998 Elsevier Science B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 515-519 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 184-185 |
Publication status | Published - 1998 |
Keywords
- Compensation
- Doping
- Optical spectroscopy
- ZnSe