Investigation of acceptor impurity levels in phosphorus implanted- and plasma-doped ZnSe/GaAs epitaxial layers grown by molecular-beam epitaxy has been performed using low temperature photoluminescence (PL) spectroscopy. It is shown that at least for weak P doping, the properties of phosphorus are similar to those of other effective mass substitutional acceptors in ZnSe. © 1998 Elsevier Science B.V. All rights reserved.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1998|
- Optical spectroscopy