The phosphorus acceptor in ZnSe

G. Neu, Christian Morhain, E. Tournié, J. P. Faurie

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Investigation of acceptor impurity levels in phosphorus implanted- and plasma-doped ZnSe/GaAs epitaxial layers grown by molecular-beam epitaxy has been performed using low temperature photoluminescence (PL) spectroscopy. It is shown that at least for weak P doping, the properties of phosphorus are similar to those of other effective mass substitutional acceptors in ZnSe. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)515-519
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998

Keywords

  • Compensation
  • Doping
  • Optical spectroscopy
  • ZnSe

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